2016年第63回応用物理学会春季学術講演会

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一般セッション(口頭講演)

17 ナノカーボン » 17.2 グラフェン

[22a-S011-1~16] 17.2 グラフェン

2016年3月22日(火) 09:00 〜 13:15 S011 (南講義棟)

前橋 兼三(農工大)

10:15 〜 10:30

[22a-S011-6] Influence of Cu crystallographic orientations on graphene anisotropic etching

〇(D)Sharma Kamal Prasad、Kalita Golap1、Tanemura Masaki1 (1.Nagoya Inst. Technol.)

キーワード:Graphene,LP-CVD,Anisotropic etching

Etching process has been established as an important tool to understand the growth of graphene and other 2D materials; as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of Cu crystallographic orientation on graphene anisotropic etching process. Microscopic analysis showed different shape and size of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains on the basis of Crystallograpic orientaions of Cu with dissimilar anisotropic etching.