[22a-S421-1~11] 17.3 Layered materials

[22a-S421-1] [Young Scientist Presentation Award Speech] Surface Oxides on WSe₂ as P-Type Contacts and Dopants

〇Mahito Yamamoto¹, Shu Nakaharai¹, Keiji Ueno², Kazuhito Tsukagoshi¹ (1.NIMS, 2.Saitama Univ.)

Keywords:transition metal dichalcogenides,transition metal oxides,field effect transistor

Transition metal oxides such as MoO_x and WO_x have attracted much attention as effective p-type contacts and dopants for 2D semiconductor devices, owing to their large work functions and electron affinities. In this talk, we will introduce that WO_x thermmally-grown on atomically thin WSe₂ can be used as both environmentally controlled dopants and low-barrier contacts for high-performance p-type WSe₂ transistors.