Layer Number Identification of Sputtering Deposited MoS<sub>2</sub> Thin Films by X-ray Photoelectron Spectroscopy and Optical Contrast Method

SEIYA ISHIHARA; YUSUKE HIBINO; NAOMI SAWAMOTO; KOHEI SUDA; TAKUMI OHASHI; KENTAROU MATSUURA; HIDEAKI MACHIDA; MASATO ISHIKAWA; HIROSHI SUDOH; HITOSHI WAKABAYASHI; ATSUSHI OGURA

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Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[22a-S421-1~11] 17.3 Layered materials

Tue. Mar 22, 2016 9:00 AM - 12:00 PM S421 (S4)

Yasumitsu Miyata(Tokyo Metropolitan Univ.)

11:30 AM - 11:45 AM

△ [22a-S421-10] Layer Number Identification of Sputtering Deposited MoS₂ Thin Films by X-ray Photoelectron Spectroscopy and Optical Contrast Method

〇SEIYA ISHIHARA¹, YUSUKE HIBINO¹, NAOMI SAWAMOTO¹, KOHEI SUDA¹, TAKUMI OHASHI², KENTAROU MATSUURA², HIDEAKI MACHIDA³, MASATO ISHIKAWA³, HIROSHI SUDOH³, HITOSHI WAKABAYASHI², ATSUSHI OGURA¹ (1.Meiji Univ., 2.Tokyo Tech, 3.Gas-phase Growth Ltd.)

Keywords:MoS2

Presentation information

[22a-S421-1~11] 17.3 Layered materials

△ [22a-S421-10] Layer Number Identification of Sputtering Deposited MoS2 Thin Films by X-ray Photoelectron Spectroscopy and Optical Contrast Method

△ [22a-S421-10] Layer Number Identification of Sputtering Deposited MoS₂ Thin Films by X-ray Photoelectron Spectroscopy and Optical Contrast Method