10:15 〜 10:30
▼ [22a-S421-6] Synthesis of BCN layers and anisotropic etching for nanoribbon fabrication
キーワード：BCN layers,Nanoribbons,Anisotropic etching
Developing ordered heterostructures with controlled shape, size and edges can introduce unexpected electronic and magnetic properties. Furthermore it has been predicted that atomically thin h-BN nanoribbons (NRs) can exhibit narrow band gap with improved conductivity owing to transverse electric field or edge structures. Similarly, half-metallicity in h-BCN NRs has been expected by theoretical analysis. The anisotropic etching of hexagonal boron-carbon-nitrogen (h-BCN) was achieved by atmospheric pressure chemical vapor deposition (APCVD) technique using H2 (2.5 sccm) and Ar (85 sccm) gas mixture at 10200C annealing temperature. We synthesized h-BCN layers by mixing camphor and borazine solid precursors as C, N and B source. XPS and Raman analysis were carried out to confirm presence B and N along with C atoms and formation of h-BCN like structure. Figure 1 shows field emission scanning electron microscope (FESEM) images confirming anisotropic etching of h-BCN film with etched hole, NRs and other particular structures similar to that of graphene and h-BN films. The anisotropic etching process of h-BCN basal plane and thereby fabricating NRs and other structures can open up new possibilities in 2D hybrid materials fabrication.