[22a-S423-1~12] 13.9 光物性・発光デバイス

▲ [22a-S423-1] Luminescence of Silicon nanocrystals treated by High-pressure Water Vapor Annealing

〇Gelloz Bernard¹、Juangsa Firman Bagja²、Nozaki Tomohiro²、Jin Lianhua³、Koshida Nobuyoshi⁴ (1.Nagoya Univ.、2.Tokyo Inst. Tech.、3.Yamanashi Univ.、4.Tokyo Univ. Agr.&Tech.)

キーワード：silicon nanocrystals,passivation,photoluminescence

We report a study of the luminescence of SiNCs fabricated by a non-thermal plasma technique. The SiNCs are spherical and exhibit an average size of about 6 nm. They were not luminescent in as-prepared state. In order to reduce their sizes as well as to provide a good oxide surface passivation, they were treated by high-pressure water vapor annealing (HWA). The resulting oxide passivated SiNCs exhibit bright photoluminescence.