The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[22a-S423-1~12] 13.9 Optical properties and light-emitting devices

Tue. Mar 22, 2016 9:00 AM - 12:15 PM S423 (S4)

Takashi Kunimoto(Tokushima Bunri Univ.)

9:15 AM - 9:30 AM

[22a-S423-2] Porous Silicon Optical Constants from Photoconduction in HF

Bernard Gelloz1, Hiroki Fuwa2, Lianhua Jin2 (1.Nagoya Univ., 2.Yamanashi Univ.)

Keywords:porous silicon,optical constants,electrochemical

Most methods used to determine the optical constants of porous silicon (PSi) use dried samples, sophisticated setups, and meticulous sample preparation, which may alter PSi structure. Here, we show that the optical constants of PSi can be measured using in-situ photoconduction of PSi in HF during PSi formation. The absorption coefficient and the refractive index can be obtained by fitting photocurrent-PSi thickness curves. This technique has several advantages over conventional ones.