2016年第63回応用物理学会春季学術講演会

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13 半導体 » 13.9 光物性・発光デバイス

[22a-S423-1~12] 13.9 光物性・発光デバイス

2016年3月22日(火) 09:00 〜 12:15 S423 (南4号館)

國本 崇(徳島文理大)

09:15 〜 09:30

[22a-S423-2] Porous Silicon Optical Constants from Photoconduction in HF

Gelloz Bernard1、Fuwa Hiroki2、Jin Lianhua2 (1.Nagoya Univ.、2.Yamanashi Univ.)

キーワード:porous silicon,optical constants,electrochemical

Most methods used to determine the optical constants of porous silicon (PSi) use dried samples, sophisticated setups, and meticulous sample preparation, which may alter PSi structure. Here, we show that the optical constants of PSi can be measured using in-situ photoconduction of PSi in HF during PSi formation. The absorption coefficient and the refractive index can be obtained by fitting photocurrent-PSi thickness curves. This technique has several advantages over conventional ones.