[22a-W241-1~11] CS.6 10.1/10.2/10.3 Code sharing session "Emerging control-methods of magnetization and related phenomena"

▲ [22a-W241-2] Large voltage-induced magnetic anisotropy change in Cr/ultrathin Fe/MgO/Fe magnetic tunnel junctions Ⅱ

〇Takayuki Nozaki¹, Anna Koziol-Rachwal^1,2, Witold Skowronski^1,2, Vadym Zayets¹, Yoichi Shiota¹, Shingo Tamaru¹, Hitoshi Kubota¹, Akio Fukushima¹, Shinji Yuasa¹, Yoshishige Suzuki^1,3 (1.AIST, 2.AGH Univ., 3.Osaka Univ.)

Keywords:Voltage effect,Perpendicular magnetic anisotropy,Tunnel magnetoresistance

Voltage control of magnetic anisotropy (VCMA) effect in an ultrathin ferromagnetic metal layer is expected to be a promissing approach for ultra-low power spin manipulation. In last autumn JSAP conference, we reported the large VCMA effect observed in Cr/ultrathin Fe/MgO/Fe magnetic tunnel junctions. In this study, we report further systematic investigations in this system, focusing on the structural analysis using EELS and MgO thickness dependence of the VCMA effect.