[22a-W241-1~11] CS.6 10.1, 10.2, 10.3のコードシェアセッション「新規スピン操作方法および関連現象」

▲ [22a-W241-2] Large voltage-induced magnetic anisotropy change in Cr/ultrathin Fe/MgO/Fe magnetic tunnel junctions Ⅱ

〇野崎 隆行¹、Koziol-Rachwal Anna^1,2、Skowronski Witold^1,2、Zayets Vadym¹、塩田 陽一¹、田丸 慎吾¹、久保田 均¹、福島 章雄¹、湯浅 新治¹、鈴木 義茂^1,3 (1.産総研、2.AGH Univ.、3.阪大基礎工)

キーワード：Voltage effect,Perpendicular magnetic anisotropy,Tunnel magnetoresistance

Voltage control of magnetic anisotropy (VCMA) effect in an ultrathin ferromagnetic metal layer is expected to be a promissing approach for ultra-low power spin manipulation. In last autumn JSAP conference, we reported the large VCMA effect observed in Cr/ultrathin Fe/MgO/Fe magnetic tunnel junctions. In this study, we report further systematic investigations in this system, focusing on the structural analysis using EELS and MgO thickness dependence of the VCMA effect.