The 63rd JSAP Spring Meeting, 2016

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6 Thin Films and Surfaces » 6.4 Thin films and New materials

[22p-H103-1~8] 6.4 Thin films and New materials

Tue. Mar 22, 2016 1:00 PM - 3:00 PM H103 (H)

Kentaro Shinoda(AIST)

2:45 PM - 3:00 PM

[22p-H103-8] Sealing performance of SiO2 bonding Layer Formed in Seal Space at Room
Temperature

〇Toshiyuki Kaeriyama

Keywords:SiO2 bonding layer,gas barrier,corrosion resistance

Gas barrier performance for SiO2 bonding layer formed in seal space at room temperature was evaluated using helium gas leak detector, helium gas leak rate of 4×10-12Pa·m3/s was measured on a measurement system with tiny piece of blank slide glass plate sample. There was no significant difference seen in the measured value between the blank sample and the slide glass to slide glass bond sample with the SiO2 bonding layer. An application of the technology enabling to measure an amount of helium gas with the level of 10-14Pa·m3/s will be next challenge for the evaluation of gas barrier performance of the SiO2 bonding layer. It was confirmed that the SiO2 bonding layer is kept intact after the immersion test in perfluoropropionic acid for 24 hours at room temperature and the bonding layer possesses good corrosion resistance.