[22p-H121-1~7] 15.4 III-V-group nitride crystals

△ [22p-H121-6] Nitride-based tunnel junctions with graded GaInN layer

〇Daiki Takasuka¹, Masataka Ino¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

Keywords:semiconductor,tunnel junction