Investigation on low operational current amorphous InGaZnO-based resistive switching memory

Presentation information

Oral presentation

Joint Session K » Joint Session K

Tue. Mar 22, 2016 12:30 PM - 2:45 PM S222 (S2)

12:45 PM - 1:00 PM

〇Keisuke Kado¹, Yoshimitsu Yamauchi¹, Kyouhei Nabesaka¹, Mami Fujii¹, Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:Resistive switching memory,Amorphous InGaZnO,Low operational current