[22p-S222-1~9] 21.1 Joint Session K

△ [22p-S222-8] Effects of Ion Implantation and Annealing on Transfer Characteristics of Solution-processed Amorphous IGZO Thin Films

〇(M2)Dongjing Chen¹, Takaaki Morimoto¹, Nobuko Fukuda², Yoshimichi Ohki^1,3 (1.GSASE, 2.FLEC of AIST, 3.RIMST of Waseda Univ.)

Keywords:IGZO,solution-processed,ion implantation

Solution processed IGZO films sintered at 250 °C show poor transfer characteristics with a low on-state current and a large clockwise hysteresis. When the films are implanted with positive phosphorus ions and are successively annealed at 250 °C, their transfer characteristics are improved much, exhibiting a higher on-state current with no appreciable hysteresis. It has been confirmed that the binding energy of electrons is increased by the implantation at Ga3d, In3d_5/2 and Zn2p_3/2 states. It has also been confirmed that the oxygen deficiency becomes less abundant by the annealing following the implantation. Therefore, release of free electrons provided from In, Ga, and Zn and the decrease of oxygen deficiency as a result of the ion implantation and the following thermal treatment bring about the improvement of transfer characteristics.