Kosuke Funaki

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Speaker, Author, Co-Author

Fri. Sep 8, 2017 9:00 AM - 11:30 AM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[8a-S22-1~9] 13.8 Compound and power electron devices and process technology

11:00 AM - 11:15 AM

△ [8a-S22-8] Degradation mechanisms of NO₂ adsorbed H-terminated diamond MOS FETs by constant voltage stress.

〇(M2)Kosuke Funaki¹, Yuma Ishimatsu¹, Satoshi Masuya¹, Kyosuke Miyazaki¹, Takayoshi Osima¹, Makoto Kasu¹, Toshiyuki Oishi¹ (1.Saga Univ.)