Ravikiran Lingaparthi

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:45 PM - 6:00 PM C17 (Training Room 2)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:30 PM - 3:45 PM

▲ [7p-C17-8] Morphological and Electrical Properties of β-Ga₂O₃ (010) Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

〇Ravikiran Lingaparthi¹, Yoshiaki Nakata¹, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corporation)