Daisuke Hagishima

→ Search for Daisuke Hagishima in Google Scholar

Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

4:30 PM - 4:45 PM

[7p-S22-12] Simulation for JFET based GaN Power Devices with Schottky Contact Model

〇Daisuke Hagishima¹, Takuo Kikuchi¹, Satoshi Ishikawa¹ (1.Toshiba Corporation)