Rumi Takayama

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 4:00 PM - 6:00 PM PA8 (P)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

4:00 PM - 6:00 PM

[6p-PA8-19] Characterization of p-ch GaN MOS Structure on Polarization-Junction Substrate

〇(M2)Rumi Takayama¹, Takuya Hoshii¹, Akira Nakajima², Shinichi Nishizawa³, Hiromichi Ohashi¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST, 3.Kyushu Univ.)

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