Takeyoshi Onuma

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:45 PM - 6:00 PM C17 (Training Room 2)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:15 PM - 4:30 PM

[7p-C17-10] Optical Properties of Si-doped and Si-implanted β-Ga₂O₃ single crystals

〇Takeyoshi Onuma^1,2, Kohei Sasaki^3,2, Tatekazu Masui³, Tomohiro Yamaguchi¹, Tohru Honda¹, Akito Kuramata³, Masataka Higashiwaki² (1.Kogakuin Univ., 2.NICT, 3.Tamura Corp.)