Kouta Tatejima

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 9:00 AM - 12:00 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

9:15 AM - 9:30 AM

△ [7a-S22-2] Growth condition optimization of AlN buffer layer deposited by reactive sputtering for epitaxial growth of GaN on Si

〇(M1)Kouta Tatejima^1,2, Takahiro Nagata², Keiji Ishibashi³, Kenichirou Takahashi³, Setsu Suzuki³, Atsushi Ogura¹, Toyohiro Chikyow² (1.Meiji Univ., 2.NIMS, 3.COMET Inc.)

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