Kisho Nakamura

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:45 PM - 6:00 PM C17 (Training Room 2)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:00 PM - 3:15 PM

△ [7p-C17-6] Effect of buffer layer on solid phase epitaxy of β-Ga₂O₃ thin films by room temperature laser annealing

〇Kisho Nakamura¹, Hiroyuki Morita¹, Nobuo Tsuchimine², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech. Materials, 2.TOSHIMA Manu., 3.KISTEC)