Session information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5a-C21-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 5, 2017 9:00 AM - 11:30 AM C21 (C21)

Takeo Kageyama(Univ. of Tokyo)

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9:00 AM - 9:15 AM

[5a-C21-1] Time-resolved photoluminescence of self-assembled InGaAs quantum dots grown with various As partial pressures

〇Masayuki Urabe¹, Kazuki Takeishi¹, Kodai Itabashi¹, Akihiro Washida¹, Junichi Takayama¹, Satoshi Hiura¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

9:15 AM - 9:30 AM

[5a-C21-2] Growth and carrier dynamics optically excited in multi-layered self-assembled quantum dots of InGaAs

〇Akihirro Washida¹, Kodai Itabashi¹, Masayuki Urabe¹, Kazuki Takeishi¹, Junichi Takayama¹, Satoshi Hiura¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

9:30 AM - 9:45 AM

[5a-C21-3] Electronic state of closely-stacked InAs/GaAs quantum dots grown at various substrate temperature

〇Toshiyuki Kaizu^1,2, Takashi Kita¹ (1.Grad. Sch. of Eng., Kobe Univ.., 2.CSREA, Kobe Univ.)

9:45 AM - 10:00 AM

[5a-C21-4] Growth Rate Dependence of Spatial Regularity of InAs-GaAs Quantum Dots

〇Tomoya Konishi¹, Christopher Burrows², Gavin Bell² (1.NIT, Anan, 2.Univ. Warwick)

10:15 AM - 10:30 AM

[5a-C21-5] Polarization dependence of photoluminescence from InAs quantum dots and superlattice grown by digital embedding on InP(311)B substrates

〇Hiroyuki Yamamoto^1,2, Kouichi Akahane², Atsushi Matsumoto², Toshimasa Umezawa², Atsushi Kanno², Naokatsu Yamamoto², Hideyuki Sotobayashi¹ (1.Aogaku Univ., 2.NICT)

10:30 AM - 10:45 AM

[5a-C21-6] Luminescence properties of high-density InAs QDs on GaAsSb/GaAs(001) (2)

〇Ryo Sugiyama¹, Sho Tatsugi¹, Tomah Sogabe², Koichi Yamaguchi¹ (1.UEC, 2.UEC i-PERK)

10:45 AM - 11:00 AM

[5a-C21-7] Growth of multi-stacked InGaAs/AlGaAs quantum dots on GaAs (311)B substrate

〇(M2)Ayaka Matsuoka¹, Yasushi Shoji², Ryo Tamaki^1,2, Yoshitaka Okada^1,2 (1.The Univ. of Tokyo, 2.RCAST, The Univ. of Tokyo)

11:00 AM - 11:15 AM

[5a-C21-8] Structural analysis of In_xGa_1-xAs/InAs/GaAs(111)A grown by ATLAS method

〇Takaaki Mano¹, Akihiro Ohtake¹, Yoshiki Sakuma¹ (1.NIMS)

11:15 AM - 11:30 AM

△ [5a-C21-9] Evaluation of current-voltage characteristics of selectively-grown single InGaAs microdisc on Si (111) with an optical micro-manipulator

〇(D)Toma Watanabe¹, Takeshi Ishida², Satoshi Iwamoto², Yasuhiko Arakawa², Yoshiaki Nakano¹, Masakazu Sugiyama³ (1.Univ. of Tokyo, 2.IIS, 3.RCAST)

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