Oral presentation
13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices
Thu. Sep 7, 2017 9:00 AM - 12:15 PM C13 (office 2-2)
Takashi Suemasu(Univ. of Tsukuba), Kosuke Hara(Univ. of Yamanashi)
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9:00 AM - 9:15 AM
〇Takeshi Arai1, Soshi Iimura1, Junghwan Kim2, Hideo Hosono1,2 (1.MSL, TIT, 2.MCES, TIT)
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9:15 AM - 9:30 AM
〇Yoshihito Maeda1 (1.Kyutech)
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9:30 AM - 9:45 AM
〇Motoharu Imai1, Yoshitaka Matsushita1 (1.NIMS)
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9:45 AM - 10:00 AM
〇Kenichiro Sakai1, Yuki Asai2, Kazuya Ishibashi2, Masahiko Nishijima3, Tsuyoshi Yoshitake2 (1.Kurume NCT, 2.Kyushu Univ., 3.Tohoku Univ.)
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10:00 AM - 10:15 AM
Peiling Yuan1, Ryo Tamaki2, Lixue Cheng3, Nazmul Ahsan2, Yoshitaka Okada2, 〇Hirokazu Tatsuoka3 (1.Grad. Sch. Sci. & Technol., Shizuoka Univ., 2.RCAST, The Univ. of Tokyo, 3.Grad. Sch. Integr. Sci. & Technol., Dept. Eng., Shizuoka Univ.)
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10:15 AM - 10:30 AM
〇Faisal Budiman1, Yoichi Horibe1, Hirofumi Tanaka1 (1.Kyushu Institute of Technology)
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10:45 AM - 11:00 AM
〇Yuma Onizawa1, Tatsuya Nakano1, Misa Yoshida2, Daiju Tsuya2, Haruhiko Udono1 (1.Ibaraki Univ., 2.NIMS)
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11:00 AM - 11:15 AM
〇Suguru Yachi1, Ryota Takabe1, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba)
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11:15 AM - 11:30 AM
〇(M1)Fuko Yaguchi1, Kohei Nakano1, Haruhiko Udono1 (1.Ibaraki Univ.)
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11:30 AM - 11:45 AM
〇Motoki Iinuma1, Hajime Eguchi1, Naoki Murakoso1, Hirofumi Hoshida1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)
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11:45 AM - 12:00 PM
〇Emha Bayu Miftahullatif1, Takabe Ryota1, Yachi Suguru1, Toko Kaoru1, Suemasu Takashi1 (1.Univ. of Tsukuba)
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12:00 PM - 12:15 PM
〇(M2)Zhihao Xu1, Tianguo Deng1, Ryota Takabe1, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba)
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