[7a-PB1-1~8] 9.3 Nanoelectronics

Thu. Sep 7, 2017 9:30 AM - 11:30 AM PB1 (P)

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9:30 AM - 11:30 AM

[7a-PB1-1] Electrical Properties of Multiple-Connected Nanogaps Formed by Electromigration Between Selected Electrodes

〇Keita Sakai¹, Koji Minami¹, Soki Tani¹, Mamiko Yagi¹, Mitsuki Ito¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

9:30 AM - 11:30 AM

[7a-PB1-2] Electrical Properties of Series-Parallel-Connected Au Nanogaps During Electromigration-Based Current Biasing Method

〇Koji Minami¹, Soki Tani¹, Mamiko Yagi¹, Mitsuki Ito¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

9:30 AM - 11:30 AM

[7a-PB1-3] Electrical Characteristics in Ni Nanogap Electrodes with Asymmetric Width under Application of Magnetic Field

〇Yasuo Azuma¹, Yutaka Majima¹ (1.Tokyo Tech.)

9:30 AM - 11:30 AM

▲ [7a-PB1-4] Gate Oscillation of Chemically Assembled Single-Electron Transistor
Using 2 nm Au Nanoparticle

〇(M2)Pipit Uky Vivitasari¹, Yoon Young Choi¹, Ain Kwon¹, Yasuo Azuma¹, Masanori Sakamoto², Toshiharu Teranishi², Yutaka Majima¹ (1.Tokyo Tech., 2.Kyoto Univ.)

9:30 AM - 11:30 AM

▲ [7a-PB1-5] InP@ZnS Quantum Dot Single-Electron Transistor Memory

〇(D)Yoonyoung Choi¹, Yasuo Azuma¹, Yutaka Majima¹ (1.Tokyo Inst. of Tech.)

9:30 AM - 11:30 AM

[7a-PB1-6] Series-Connected Au-Based Single-Electron Transistors Fabricated by Activation

〇Soki Tani¹, Koji Minami¹, Kazuki Inoue¹, Mamiko Yagi¹, Mitsuki Ito¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

9:30 AM - 11:30 AM

[7a-PB1-7] Explanation of pump operation in common-gate triple-dot single-electron devices

〇Reon Takanoya¹, Shigeru Imai¹ (1.Ritsumeikan Univ.)

9:30 AM - 11:30 AM

[7a-PB1-8] Design of Multi-Layer Single-Electron Information-Processing Circuit

〇Toshihiko Tanabe¹, Takahide Oya¹ (1.Yokohama National Univ.)

Session information

[7a-PB1-1~8] 9.3 Nanoelectronics

[7a-PB1-1] Electrical Properties of Multiple-Connected Nanogaps Formed by Electromigration Between Selected Electrodes

[7a-PB1-2] Electrical Properties of Series-Parallel-Connected Au Nanogaps During Electromigration-Based Current Biasing Method

[7a-PB1-3] Electrical Characteristics in Ni Nanogap Electrodes with Asymmetric Width under Application of Magnetic Field

▲ [7a-PB1-4] Gate Oscillation of Chemically Assembled Single-Electron Transistor
Using 2 nm Au Nanoparticle

▲ [7a-PB1-5] InP@ZnS Quantum Dot Single-Electron Transistor Memory

[7a-PB1-6] Series-Connected Au-Based Single-Electron Transistors Fabricated by Activation

[7a-PB1-7] Explanation of pump operation in common-gate triple-dot single-electron devices

[7a-PB1-8] Design of Multi-Layer Single-Electron Information-Processing Circuit

Authentication

Session information

[7a-PB1-1~8] 9.3 Nanoelectronics

[7a-PB1-1] Electrical Properties of Multiple-Connected Nanogaps Formed by Electromigration Between Selected Electrodes

[7a-PB1-2] Electrical Properties of Series-Parallel-Connected Au Nanogaps During Electromigration-Based Current Biasing Method

[7a-PB1-3] Electrical Characteristics in Ni Nanogap Electrodes with Asymmetric Width under Application of Magnetic Field

▲ [7a-PB1-4] Gate Oscillation of Chemically Assembled Single-Electron TransistorUsing 2 nm Au Nanoparticle

▲ [7a-PB1-5] InP@ZnS Quantum Dot Single-Electron Transistor Memory

[7a-PB1-6] Series-Connected Au-Based Single-Electron Transistors Fabricated by Activation

[7a-PB1-7] Explanation of pump operation in common-gate triple-dot single-electron devices

[7a-PB1-8] Design of Multi-Layer Single-Electron Information-Processing Circuit

Authentication

▲ [7a-PB1-4] Gate Oscillation of Chemically Assembled Single-Electron Transistor
Using 2 nm Au Nanoparticle