Session information

Tweet

Symposium (Oral)

Symposium » III-V semiconductor growth technology for innovative devices

[8p-A203-1~4] III-V semiconductor growth technology for innovative devices

Fri. Sep 8, 2017 1:15 PM - 3:15 PM A203 (203)

Ishikawa Fumitaro(Ehime Univ.)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

+Add all to schedule

1:15 PM - 1:45 PM

[8p-A203-1] Sublattice Reversal Epitaxy on High-Index Substrate and Its Application to Novel Surface-Emitting Terahertz Devices

〇Takahiro Kitada¹, Xiangmeng Lu¹, Yasuo Minami¹, Naoto Kumagai², Ken Morita³ (1.Tokushima Univ., 2.AIST, 3.Chiba Univ.)

1:45 PM - 2:15 PM

[8p-A203-2] Toward the development of THz biochips with GaAs

〇Masayoshi Tonouchi¹ (1.Osaka Univ.)

2:15 PM - 2:45 PM

[8p-A203-3] Eptitaxial growth on InP template on SiO2/Si substrate for fabricating membrane lasers/Si substrate for fabricating membrane lasers

〇Shinji Matsuo¹ (1.NTT)

2:45 PM - 3:15 PM

[8p-A203-4] Crystal growth technology of superlattice and its application to solar cells

〇Masakazu Sugiyama¹ (1.RCAST, Univ. Tokyo)

×

Authentication

Password authentication.
Password is required to view the PDF. Please enter a password to authenticate.

The password has been sent to pre-registrants.
For onsite registrants, please refer to the official guidebook which will be distributed at the venue.
The password will be sent to all JSAP members in March 2018.

×

Please log in with your participant account.
» Participant Log In