Symposium (Oral)

[7p-A201-1~10] Frontier of the research in dislocations

Thu. Sep 7, 2017 1:30 PM - 5:30 PM A201 (201)

Kentaro Kutsukake(Tohoku Univ.), Hiroshi Yano(Univ. of Tsukuba)

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1:30 PM - 1:45 PM

[7p-A201-1] Introductory talk: Purpose of the symposium and introduction of the divisions

〇Kentaro Kutsukake¹, Hiroshi Yano², Shotaro Takeuchi³, Hisashi Murakami⁴ (1.Tohoku Univ., 2.Tsukuba Univ., 3.Osaka Univ., 4.Tokyo Univ. of Agr. & Tech.)

1:45 PM - 2:15 PM

[7p-A201-2] Dynamic properties of dislocations in semiconductors

〇Ichiro Yonenaga¹ (1.Tohoku Univ.)

2:15 PM - 2:45 PM

[7p-A201-3] Electrical conduction along dislocations in topological insulators

〇Yuki Tokumoto¹ (1.Univ. Tokyo)

2:45 PM - 3:00 PM

[7p-A201-4] Evaluation of Threading Mixed Dislocations in SiC by X-ray Topography

〇Katsuhiko Nakai¹, Tetsuya Nagai¹, Syuichi Moriwake¹, Kengo Noami¹, Toshiro Futagi¹ (1.NSST)

3:00 PM - 3:15 PM

[7p-A201-5] Observation of threading dislocations in ammono-thermal gallium nitride single crystal by using synchrotron X-ray topography

〇Yongzhao Yao¹, Yukari Ishikawa¹, Yoshihiro Sugawara¹, Yumiko Takahashi², Keiichi Hirano² (1.JFCC, 2.KEK)

3:15 PM - 3:30 PM

△ [7p-A201-6] Bright-Field X-ray Topography under Multiple-Diffraction Conditions Effective to Determine Burgers Vectors of Misfit Dislocations in Si.

〇(M2)Tetsuya Tsurumaru¹, Hiroyuki Mizuochi¹, Haruka Kamamoto¹, Yoshiyuki Tsusaka^1,2, Yasushi Kagoshima^1,2, Junji Matsui² (1.Univ. of Hyogo , Graduate School of Material Sci., 2.Syn. Rad. Nano-Tech. Center)

3:45 PM - 4:15 PM

[7p-A201-7] Three-Dimensional Imaging of Threading Dislocations in GaN Crystals using Multiphoton-Excitation Photoluminescence

〇Tomoyuki Tanikawa¹, Kazuki Ohnishi¹, Takashi Matsuoka¹ (1.IMR, Tohoku Univ.)

4:15 PM - 4:45 PM

[7p-A201-8] Characterization and control of dislocations in 4H-SiC

〇Hidekazu Tsuchida¹, Isaho Kamata¹, Ryohei Tanuma¹, Jason Paul Hadorn¹, Masahiro Nagano¹ (1.CRIEPI)

4:45 PM - 5:15 PM

[7p-A201-9] Dislocations in SiC from a Perspective of Power Device Application

〇Tsunenobu Kimoto¹ (1.Kyoto Univ.)

5:15 PM - 5:30 PM

[7p-A201-10] Expansion behavior of basal plane dislocation on 4H-SiC A-plane by electron beam irradiation

〇Yukari Ishikawa^1,2, Masaki Sudo², Yong-Zhao Yao¹, Yoshihiro Sugawara¹, Masashi Kato² (1.JFCC, 2.Nagoya Inst. Tech.)

Sessions

Symposium » Frontier of the research in dislocations