The 78th JSAP Autumn Meeting, 2017

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[5a-A203-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 5, 2017 9:00 AM - 11:45 AM A203 (203)

Takuji Hosoi(Osaka Univ.)

9:15 AM - 9:30 AM

[5a-A203-2] First-principles study on electronic structure of SiC/SiO2 after nitridization

〇TOMOYA ONO1 (1.CCS, Univ. Tsukuba)

Keywords:SiC, MOS Interface, First-principles calculation