The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[5a-A301-1~11] 15.4 III-V-group nitride crystals

Tue. Sep 5, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Ryota Ishii(Kyoto Univ.), Mark Holmes(The University of Tokyo)

9:00 AM - 9:15 AM

[5a-A301-1] Study on light emission mechanism in Eu-doped GaN by the initial signal analysis of time-resolved spectroscopy

〇(D)Tomohiro Inaba1, Takanori Kojima1, Jun Tatebayashi1, Genki Yamashita2, Eichi Matsubara2,3, Masaaki Ashida2, Yasufumi Fujiwara1 (1.Osaka univ. Eng., 2.Osaka univ. Eng. Sci., 3.Osaka dent. univ.)

Keywords:europium, GaN

A deep understanding of the light emission mechanism is indispensable for increasing the light output for practical use of Eu-doped GaN red LED. In this study, we measured the sample with the different V / III ratio by the initial signal analysis of time resolved PL. We found that the ratio of the energy transfer rate from GaN to Eu ion and the nonradiative recombination rate of GaN is the key factor of the improved emission efficiency.