The 78th JSAP Autumn Meeting, 2017

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[5a-A301-1~11] 15.4 III-V-group nitride crystals

Tue. Sep 5, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Ryota Ishii(Kyoto Univ.), Mark Holmes(The University of Tokyo)

9:15 AM - 9:30 AM

[5a-A301-2] Analysis of emission characteristics of deep levels in p-type GaN

〇Ryo Shoji1, Daisuke Uehara1, Bei Ma1, Ken Morita1, Yoshihiro Ishitani1, Kenji Shiojima2 (1.Chiba Univ., 2.Fukui Univ.)

Keywords:GaN, deep levels, photoluminescence