[5a-A504-1~12] 12.2 Characterization and Materials Physics

△ [5a-A504-12] Study of the transition region between the quantum and classical states in Ni₇₈Fe₂₂/Alq₃/Ni₇₈Fe₂₂ junctions

〇Yuma Sasaki¹, Takahiro Misawa¹, Sumito Mori¹, Takashi Komine², Norihisa Hoshino³, Tomoyuki Akutagawa³, Masaya Fujioka¹, Junji Nishii¹, Hideo Kaiju¹ (1.RIES Hokkaido Univ., 2.Eng. Ibaraki Univ., 3.IMRAM Tohoku Univ.)

Keywords:molecular nanoelectronics, organic semiconductor, transport property

We propose nanoscale junction devices utilizing metal thin-film edges toward a new creation of molecular nanoelectronics devices. In this study, we attempt the detailed experiments and theoretical investigation on electrical conduction characteristics of Ni₇₈Fe₂₂/Alq₃/Ni₇₈Fe₂₂ junction devices in the transition region between the quantum and classical states. As a result of the experiments, we have observed that the resistance of devices in the transition region increases as the junction area increases. Moreover, we have successfully explained the behavior of increasing resistance by a newly proposed theoretical calculation based on a parallel circuit model, consisting of the resistances in the quantum and classical states, in which an extended sigmoid function is taken into account.