Electrical characteristics of Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode with a TiN electrode

Takashi Kaneko; Iriya Muneta; Takuya Hoshii; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; Kuniyuki Kakushima

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[5a-C17-1~10] 13.8 Compound and power electron devices and process technology

Tue. Sep 5, 2017 9:30 AM - 12:15 PM C17 (Training Room 2)

Takayoshi Oshima(Saga Univ.)

9:45 AM - 10:00 AM

[5a-C17-2] Electrical characteristics of Ga₂O₃ Schottky barrier diode with a TiN electrode

〇Takashi Kaneko¹, Iriya Muneta¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Hiroshi Iwai², Kuniyuki Kakushima¹ (1.Tokyo Tech., 2.Tokyo Tech. IIR)

Keywords:Ga2O3, Gallium oxide, Schottky barrier diode

« Previous in this session
Next in this session »

▲

Presentation information

[5a-C17-1~10] 13.8 Compound and power electron devices and process technology

[5a-C17-2] Electrical characteristics of Ga2O3 Schottky barrier diode with a TiN electrode

[5a-C17-2] Electrical characteristics of Ga₂O₃ Schottky barrier diode with a TiN electrode