Ultra-Low-Loss Ga<sub>2</sub>O<sub>3</sub> Trench MOS-Type Schottky Barrier Diodes

Kohei Sasaki; Quang Tu Thieu; Daiki Wakimoto; Yuki Koishikawa; Akito Kuramata; Shigenobu Yamakoshi

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[5a-C17-1~10] 13.8 Compound and power electron devices and process technology

Tue. Sep 5, 2017 9:30 AM - 12:15 PM C17 (Training Room 2)

Takayoshi Oshima(Saga Univ.)

10:00 AM - 10:15 AM

[5a-C17-3] Ultra-Low-Loss Ga₂O₃ Trench MOS-Type Schottky Barrier Diodes

〇Kohei Sasaki^1,2, Quang Tu Thieu¹, Daiki Wakimoto^1,2, Yuki Koishikawa^1,2, Akito Kuramata^1,2, Shigenobu Yamakoshi^1,2 (1.Novel Crystal Tech., 2.Tamura Corp.)

Keywords:Gallium Oxide, Schottky Barrier Diode, trench MOS

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Presentation information

[5a-C17-1~10] 13.8 Compound and power electron devices and process technology

[5a-C17-3] Ultra-Low-Loss Ga2O3 Trench MOS-Type Schottky Barrier Diodes

[5a-C17-3] Ultra-Low-Loss Ga₂O₃ Trench MOS-Type Schottky Barrier Diodes