[5a-C17-1~10] 13.8 化合物及びパワー電子デバイス・プロセス技術

▲ [5a-C17-5] Gamma-Ray Irradiation Effects on Ga₂O₃ MOSFETs

〇ManHoi Wong¹、Akinori Takeyama²、Takahiro Makino²、Takeshi Ohshima²、Kohei Sasaki³、Akito Kuramata³、Shigenobu Yamakoshi³、Masataka Higashiwaki¹ (1.NICT、2.QST、3.Tamura Corp.)

キーワード：Ga2O3, radiation, gamma-ray

The high-voltage and high-temperature capabilities of Ga₂O₃ metal-oxide-semiconductor field-effect transistors (MOSFETs) are expected to find applications in extreme radiation environments. This paper reports the first investigation into the effects of ionizing radiation on Ga₂O₃ MOSFETs. The devices remained fully functional after exposure to a cumulative gamma-ray (γ-ray) dose of 1 MGy(SiO₂). High γ-ray tolerance was demonstrated for the bulk Ga₂O₃ channel by virtue of the MOSFETs’ stable DC output characteristics against irradiation. Radiation-induced degradations in the gate insulation and surface passivation were found to limit the overall radiation resistance of these devices.