[5a-C17-1~10] 13.8 Compound and power electron devices and process technology

▲ [5a-C17-7] Nitrogen Ion Implantation Technology for Vertical Ga₂O₃ Power Devices

〇ManHoi Wong¹, Chia-Hung Lin¹, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

Keywords:Ga2O3, ion implantation, current blocking

Vertical n-channel Ga₂O₃ transistors can be realized by employing insulating or p-type current blocking layers (CBLs) to define a conductive current aperture and prevent source-drain leakage. Nitrogen-ion (N⁺⁺) implanted Ga₂O₃ is studied in this work as a CBL in light of theoretical predictions and experimental reports of deep nitrogen acceptor levels in Ga₂O₃. Systematic thermal anneals and electrical measurements demonstrated implant activation, thus illustrating a pathway to N⁺⁺-implanted CBLs in Ga₂O₃ devices.