[5a-C17-1~10] 13.8 Compound and power electron devices and process technology

[5a-C17-9] Mapping of interfacial reaction of α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy

〇Hiroyoshi Imadate¹, Hitoshi Kambara², Rie Tokuda², Tokiyoshi Matsuda², Takashi Shinohe², Kenji Shiojima¹ (1.Univ. of Fukui, 2.FLOSFIA Inc.)

Keywords:Schottky contacts, gallium oxide, Scanning internal photoemission microscopy

We applied the scanning internal photoemission microscopy to characterize and visualize interfacial reaction of contacts with 3 different Schottky metals (Ti, Pt, Fe) formed on corundum-structured gallium oxide (α-Ga₂O₃). In all as-deposited samples, good I-V characteristics and clear Y maps were obtained. After annealing at 400 ^oC, Y map of the Cu/Ti/α-Ga₂O₃ contact was uniform. In Au/Ti/Pt/α-Ga₂O₃ contact, Y of the peripheral portion of the electrode significantly increased. Linear patterns where Y was not detected were observed in Y map of Cu/Ti/Fe/α-Ga₂O₃ contact. As a result, this method is effective to reliability evaluation of electrode.