[5a-C21-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5a-C21-4] Growth Rate Dependence of Spatial Regularity of InAs-GaAs Quantum Dots

〇Tomoya Konishi¹, Christopher Burrows², Gavin Bell² (1.NIT, Anan, 2.Univ. Warwick)

Keywords:quantum dot, spatial regularity, molecular beam epitaxy

The lateral ordering of InAs-GaAs QD array has been quantified as a function of growth rate, using the Hopkins-Skellam index. Spatial regularity of coherent QD arrays is improved as the growth rate is increased and can be explained by QD-QD interaction as the QD density increases. By contrast, large QD arrays with smaller number density are observed at lower growth rate. They distributed randomly on the surface regardless of the growth rate. This is consistent with a random selection of the mature QDs relaxing and coarsening by dislocation nucleation or merging each other at a later stage in the growth.