Luminescence properties of high-density InAs QDs on GaAsSb/GaAs(001) (2)

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 5, 2017 9:00 AM - 11:30 AM C21 (C21)

Takeo Kageyama(Univ. of Tokyo)

10:30 AM - 10:45 AM

〇Ryo Sugiyama¹, Sho Tatsugi¹, Tomah Sogabe², Koichi Yamaguchi¹ (1.UEC, 2.UEC i-PERK)

Keywords:MBE, quantum dot