The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5a-C21-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 5, 2017 9:00 AM - 11:30 AM C21 (C21)

Takeo Kageyama(Univ. of Tokyo)

11:15 AM - 11:30 AM

[5a-C21-9] Evaluation of current-voltage characteristics of selectively-grown single InGaAs microdisc on Si (111) with an optical micro-manipulator

〇(D)Toma Watanabe1, Takeshi Ishida2, Satoshi Iwamoto2, Yasuhiko Arakawa2, Yoshiaki Nakano1, Masakazu Sugiyama3 (1.Univ. of Tokyo, 2.IIS, 3.RCAST)

Keywords:micro-channel selective area growth