[5p-A202-1~18] 6.3 Oxide electronics

△ [5p-A202-10] Non-Destructive Observation of Chemical State in ReRAM
by Laser-excited Photoemission Electron Microscopy

〇(M2)Junpei Kawakita^1,2, Hisashi Shima^2,3, Yasuhisa Naitoh^2,3, Hiro Akinaga^2,3, Toshiyuki Taniuchi^1,2, Shik Shin^1,2 (1.ISSP, Univ. of Tokyo, 2.AIST-UTokyo OPERANDO-OIL, 3.NeRI-AIST)

Keywords:ReRAM, PEEM, operando measurement

We have demonstrated the nondestructive imaging of chemical states of Resistive Random Access Memory (ReRAM) devices using laser-excited photoemission electron microscopy. High resistance states (HRS) and low resistance states (LRS) in oxide layers beneath 10 nm thick top electrodes were observed from top view. We have succeeded in visualization nucleation and the re-oxidization of conductive filaments in the oxide layers. This new technique will accelerate research and development for various types of electronic devices.