[JSAP Paper Award Speech] Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors

Kazuki Ikeyama; Yugo Kozuka; Kenjo Matsui; Shotaro Yoshida; Takanobu Akagi; Yasuto Akatsuka; Norikatsu Koide; Tetsuya Takeuchi; Satoshi Kamiyama; Motoaki Iwaya; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[5p-A301-1~19] 15.4 III-V-group nitride crystals

Tue. Sep 5, 2017 1:15 PM - 6:45 PM A301 (Main Hall)

Kazunobu Kojima(Tohoku Univ.), Yoshio Honda(Nagoya Univ.), Yoshiki Saito(TOYODA GOSEI)

1:15 PM - 1:45 PM

[5p-A301-1] [JSAP Paper Award Speech] Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors

〇Kazuki Ikeyama¹, Yugo Kozuka¹, Kenjo Matsui¹, Shotaro Yoshida¹, Takanobu Akagi¹, Yasuto Akatsuka¹, Norikatsu Koide¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki¹ (1.Meijo Univ.)

Keywords:JSAP Paper Award Speech