[5p-A301-1~19] 15.4 III-V-group nitride crystals

[5p-A301-14] Impact on electroluminescence of AlGaN-based deep ultraviolet LED grown on macrosteps (part 1)

〇Akira Hirano¹, Michiko Kaneda¹, Yosuke Nagasawa¹, Masamichi Ippommatsu¹, Yoshio Honda^2,3, Hiroshi Amano², Isamu Akasaki^3,4 (1.UV Craftory Co., Ltd., 2.Nagoya Univ. -IMaSS, 3.Nagoya Univ. -ARC, 4.Meijo Univ.)

Keywords:AlGaN, LED, Deep ultraviolet

Using AlN templates grown on (0001) sapphire at the temperature range betweeen 1200 and 1300 degree, the dependency of sapphire miscut angle has been investigated for the AlGaN-based deep ultraviolet LEDs. For the sapphire with a miscut angle of 1.0^o relative to m-axis exhibited AlN surface with high dense macrosteps. This template show the good crystallinity with step height of about 10 nm, which is thicker than well thickenss. The LEDs grown on this template with macrosteps exhibited the high external quantum efficiency greater than 60%. Also, the longime reliablity test show the robustness of the uneven MQW.