The 78th JSAP Autumn Meeting, 2017

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[5p-A301-1~19] 15.4 III-V-group nitride crystals

Tue. Sep 5, 2017 1:15 PM - 6:45 PM A301 (Main Hall)

Kazunobu Kojima(Tohoku Univ.), Yoshio Honda(Nagoya Univ.), Yoshiki Saito(TOYODA GOSEI)

3:45 PM - 4:00 PM

[5p-A301-9] UV light absorbing and emitting diodes consisting of a p-type NiO film deposited on an n-type GaN homoepitaxial layer

〇Zehua Wang2, Hiroshi Nakai2, Sugiyama Mutsumi2, Chichibu Shigefusa1 (1.IMRAM, Tohoku Univ., 2.Faculty of Sci. and Tech. / Tokyo Univ. of Sci.)

Keywords:Electroluminescence, GaN