[5p-A405-1~7] Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites

▲ [5p-A405-3] PLD for the epitaxial growth of 2D transition metal dichalcogenide

〇Hiroyuki Nakamura¹ (1.MPI-FKF)

Keywords:WSe2, monolayer, PLD

Transition metal dichalcogenides with MX2 (M:Mo,W X:S,Se) composition have remarkable opto-electronic and spintronic properties, making scalable thin film growth both crucial and interesting. In this study, we synthesized WSe2 thin films with monolayer up to several layers using pulsed laser deposition. By X-ray diffraction, Raman, and electron beam diffraction, the structure of WSe2 films was evaluated. Based on these structural data, we discuss epitaxial relationship of the film/substrate interface as well as possible impact of substrate on the electronic/optical properties of WSe2.