[5p-A502-1~13] 9.5 New functional materials and new phenomena

[5p-A502-10] Thin Film Growth and the Transport Properties of CaAgX (X = Ag, P)

〇Takafumi Hatano¹, Junsuke Ohta¹, Ibuki Nakamura¹, Yuta Tomizawa¹, Takahiro Urata¹, Kazumasa Iida¹, Hiroshi Ikuta¹ (1.Nagoya Univ.)

Keywords:topological materials

We report the thin film growth of CaAgX (X = As, P) which attracts attention recently as a candidate of topological materials. By employing a molecular beam epitaxy method, we succeeded in the film growth of single phase films of CaAgX. As for CaAgAs, we found that the films exhibited the positive magnetoresistance due to the weak anti localization. In the talk, we will discuss the details of the growth condition and the transport properties of the films including the mixed system of CaAg(As, P)