The 78th JSAP Autumn Meeting, 2017

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

Tue. Sep 5, 2017 1:45 PM - 6:15 PM C17 (Training Room 2)

Masashi Kato(NITech), Taketomo Sato(Hokkaido Univ.)

1:45 PM - 2:00 PM

△ [5p-C17-1] Interface control process for Al2O3/GaN structures

〇Shota Kaneki1, Kenya Nishiguchi1, Tamotsu Hashizume1 (1.Hokkaido Univ.)

Keywords:GaN, MOS, Interface states