2017年第78回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.1 新物質・新機能創成(作製・評価技術)

[5p-C18-1~7] 10.1 新物質・新機能創成(作製・評価技術)

10.1と10.2と10.3のコードシェアセッションあり

2017年9月5日(火) 13:00 〜 14:45 C18 (C18)

内田 健一(物質材料研究機構)

14:30 〜 14:45

[5p-C18-7] Perpendicular magnetic anisotropy of polycrystalline Fe/MgO interfaces induced by W buffer and Tb capping layers.

〇(M2)Yuki Iida1,2、Jun Okabayashi3、Seiji Mitani1,2 (1.Univ. of Tsukuba、2.NIMS、3.The Univ. of Tokyo)

キーワード:spintronics, PMA, Fe/MgO

Polycrystalline Fe/MgO layered structures were prepared with amorphous W buffer and Tb capping layers. Perpendicular magnetic anisotropy of 0.25MJ/m3 was obtained by post-annealing for the present boron-free stacks of W/Fe/MgO/Tb with the Fe layer thickness of 1.0 nm, while boron atoms play a key role to PMA for conventional CoFeB/MgO layers. The amorphous W buffer can cause non-crystalline growth of Fe layer, and x-ray absorption spectra suggest that the Tb capping absorbs excess oxygen at the Fe/MgO interface. Orbital moment anisotropy, which was controlled by the presence of Tb layer, was also observed for the Fe layers. The present layered structure can be a useful alternative to study interface PMA.