Electrical characteristics of InSb films after BLDA

Charith Jayanada Koswaththage; Tatsuyuki Higashizako; Tatsuya Okada; Takashi Noguchi

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5p-C21-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 5, 2017 1:45 PM - 5:15 PM C21 (C21)

Manabu Mitsuhara(NTT), Kouichi Akahane(NICT)

4:30 PM - 4:45 PM

△ [5p-C21-11] Electrical characteristics of InSb films after BLDA

〇(D)Charith Jayanada Koswaththage¹, Tatsuyuki Higashizako¹, Tatsuya Okada¹, Takashi Noguchi¹ (1.Univ. of the Ryukyus)

Keywords:InSb, BLDA, Hall Device

Mica substrate is used for InSb Hall element production, which is a rare material and is expected to be hard to obtain in the near future. In this experiment, we fabricated InSb thin films on glass substrate and applied Blue Laser Diode Annealing (BLDA). Crystallinity by reflectance and hole mobility were evaluated.