[5p-C21-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5p-C21-13] Stabilization mechanism of Se-treated GaAs(111)B surface

〇Akihiro Ohtake¹, Shunji Goto², Jun Nakamura² (1.NIMS, 2.UEC-Tokyo)

Keywords:surface reconstruction, passivation, III-V semiconsuctors

The atomic structure and electronic properties of the Se-treated GaAs(111)B surface have been studied using STM, RHEED, XPS, and DFT calculations. The structure model has been proposed, in which Se atoms substitute 3/4 ML of As atoms at the outermost layer of the ideal (111)B surface. This atomic geometry eliminates all of unsaturated dangling bonds at the Se-treated surface, so that the surface electronically stabilized.