[5p-C21-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [5p-C21-5] Effect of substrate pre-treatment on antiphase domain formation in GaAs layers directly grown on on-axis Si(100) substrate

〇Ryo Nakao^1,2, Shinji Matsuo^1,2 (1.NTT Device Technology Labs., 2.Nanophotonics Center)

Keywords:direct growth, antiphase domain

The formation of antiphase domain (APD) must be supressed to improve crystalline quality of III-V layers directly grown on Si substrate. One of methods to supress APD density is use of vicinal substrate. However, it is very important to grow III-Vs on on-axis Si (100) substrate for industrial application. We have examined the effect of substrate pre-treatment on the formation of APDs. We observed the annihilation of APDs by changing the condition of substrate thermal pre-treatment.