[5p-PA1-1~82] 17 Nanocarbon Technology（Poster）

[5p-PA1-36] Field-effect transistor of bottom-up graphene nanoribbons fabricated by fluorinated anthracene trimer precursors.

〇Manabu Ohtomo^1,2, Hironobu Hayashi³, junichi Yamaguchi^1,2, Hideyuki Jippo^1,2, Hiroko Yamada³, Shintaro Sato^1,2 (1.Fujitsu Lab., 2.Fujitsu Ltd., 3.NAIST)

Keywords:Graphene nanoribbon, bottom-up

We report on the field effect transistor (FET) of bottom-up graphene nanoribbons (GNRs) fabricated by fluorinated anthracene trimer precursors. The scanning tunneling microscope (STM) analysis revealed the self-assembled packing of the fluorinated anthracene polymers on Au(111) surface. The densely-packed and highly-aligned polymers resulted in highly aligned GNRs, while inter-GNR (polymer) separation increased by 0.2 nm as polymers are dehydrogenated. The GNR-FETs are fabricated with GNRs transferred onto dielectric surface by gold etching method, and Pd nanogaps (channel length ~20-30 nm). The P-type operation of GNR-FET was observed with channel resistance considerably reduced compared with conventional GNR-FET.