[5p-PA1-1~82] 17 ナノカーボン（ポスター）

▼ [5p-PA1-61] Edge Controlled Growth of Hexagonal Boron Nitride Crystals by Atmospheric Chemical Vapor Deposition

〇(D)Kamal Prasad Sharma¹、Golap Kalita¹、Masaki Tanemura¹ (1.Nagoya Inst. Technol.)

キーワード：Hexagonal boron nitride (h-BN), Chemical vapor deposition (CVD), Edge controlled crystal growth

Hexagonal boron nitride (h-BN), a structural analogue of graphene, is a wide band gap 2D insulator consisting of alternating sp² –boned boron and nitrogen atoms. Hetero-structures of 2D materials, such as graphene and transition metal dichalcogenides, sandwiched between h-BN layers to realize exceptional properties and excellent performance drew the significant attention. Chemical vapor deposition (CVD) technique is adopted to grow large area h-BN on various transition metals. However, due to the complexity in growth mechanism, single domain size of h-BN is still limited to few micro meter . Here we tackled the edge controlled crystal growth of h-BN.